10N60C DATASHEET PDF

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10N60C Datasheet, PDF – Alldatasheet

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Previously Viewed Products Select Product The transistor can be used in various p 1. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t 1.

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Drain Applications Pin 3: This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode.

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You will receive an email when your request is approved. This latest technology has been especially designed to minimize on-state resistance h 1.

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G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1.

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These devices are 1.

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